文章摘要
陈少云,瞿波,李文杰,卓东贤.一种异靛蓝衍生半导体的合成表征和OTFT应用[J].精细化工,2019,36(4):
一种异靛蓝衍生半导体的合成表征和OTFT应用
Preparation and Properties of an Isoindigo-Derived Semiconductor and OTFT Application
投稿时间:2018-07-03  修订日期:2018-12-10
DOI:
中文关键词: 异靛蓝  给体-受体  半导体  OTFT  电子迁移率
英文关键词: isoindigo  donor-acceptor  semiconductor  OTFT  electron mobility
基金项目:国家自然科学基金(51403212);福建省自然科学基金资助项目(2015J05030);福建省中青年教师教育科研项目(科技)(JA153983);
作者单位E-mail
陈少云 泉州师范学院 chshaoy@qztc.edu.cn 
瞿波 泉州师范学院  
李文杰 泉州师范学院  
卓东贤 泉州师范学院 dxzhuo@qztc.edu.cn 
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中文摘要:
      以4-癸基十六烷基溴和6 -溴二氢吲哚-2,3-二酮为原料,将4-癸基十六烷基侧链引入到(3E,7E)-3,7-双(2-氧代二氢吲哚-3-亚基)苯并[1,2-b:4,5-b']二呋喃-2,6(3H,7H)-二酮(IBDF)中合成了IBDF-26,其再与(E)-1,2-双(三丁基甲锡烷基)乙烯通过Stille偶合制备了基于异靛蓝衍生大稠环聚合物半导体PIBDFV-26。采用TGA、DSC、UV、CV、XRD、ATM对PIBDFV-26的性能、结构、形貌进行了表征。结果表明,基于异靛蓝大稠环的半导体PIBDFV-26在三氯乙烯(TCE)中的溶解性良好,具有良好的热稳定性,HOMO/ LUMO能级为-5.96 eV /-4.62 eV,光学帯隙为1.34eV。XRD结果表明,聚合物链沿边沿取向形成层状晶体结构,层间距为2.55×10-6 mm,π-π堆积距离为3.46×10-7 mm。AFM显示,退火处理的PIBDFV-26薄膜表面含有纳米级的晶状颗粒。将PIBDFV-26组装有机薄膜晶体管(OTFT)器件进行了测试,结果显示OTFT器件表现出电子传输(negative,n)型沟道的电荷传输特性。150℃退火处理的聚合物薄膜的平均电子迁移率为0.13cm2/V?s。
英文摘要:
      4-Decyl-1-hexadecyl side chin is introduced into (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo [1,2-b: 4,5-b']difuran-2,6(3H,7H)-dione(IBDF) with the material 4-Decyl-1-hexadecyl bromide and 6-bromoindoline-2,3-dione, and then Stille couple with (E)-1,2-bis(tributylstannyl)ethene to obtain a poly-mer semiconductor PIBDFV-26 with large fused ring based on isoindigo (IID). The property, structure and morphology of PIBDFV-26 are characterized by TGA, DSC, UV, CV, XRD and ATM. The results show that the semiconductor PIBDFV-26 has good solubility in trichloroethylene (TCE) and good thermal stability. The HOMO/LUMO energy level is -5.66 eV/-4.62 eV and the optical gap is 1.34 eV. XRD results show that the polymer chains are likely packed in a lamellar crystalline structure with an edge-on orientation and the d-spacing and π-π stacking distance are 2.55×10-6 mm and 3.46 ×10-7 mm, respectively. AFM shows that the surface of the annealed PIBDFV-26 film contains nano-crystalline particles. The PIBDFV-26 is assembled into an organic thin film transistor (OTFT) device and tested, and the results show that the OTFT device ex-hibits n-type charge transfer characteristic. The average electron mobility of the polymer film annealed at 150oC is 0.13 cm2/V?s.
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