太阳能硅制备过程湿法提纯SiO2的工艺优化
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Optimization of Hydrometallurgical Purification for SiO2 in the Process of Preparing Solar-Grade Silicon
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    摘要:

    考察了HF浓度、H2C2O4浓度、HNO3浓度、酸浸时间、粒径、液固比等因素对混酸法提纯二氧化硅工艺过程的影响,利用电感耦合等离子体发射光谱仪(ICP-OES)、场发射扫描电子显微镜(SEM)进行表征。结果表明最佳工艺条件为:w(HF)=2%、w(H2C2O4)=3%、w(HNO3)=30%、酸浸时间4h、粒径100目~120目、液固比4:1、酸浸温度30℃。Fe、Al、Ca、P杂质的去除率分别达到99.99%、14.02%、73.27%、60.00%,经混酸法处理后二氧化硅中杂质总量的质量分数降至1.465×10-4。

    Abstract:

    As a pre-treatment unit for preparing solar-grade silicon, hydrometallurgical route could remove most metallic impurities in silicon dioxide (SiO2) and raise the final product yield. Acid leaching of SiO2 could reduce the cost and energy consumption of industrialized development. Combined with high purity of reducing agent, the successor process of pyrometallurgy can also achieve “continuous casting”. Factors such as the mass fraction of leaching agent, time, the particle size of SiO2, and the liquid-solid ratio were investigated, and the samples were characterized by ICP-OES, SEM, etc. The optimal reaction conditions were as follows: w(HF) = 2%, w(H2C2O4) = 3%, w(HNO3) = 30%, reaction time 4h, the average size of SiO2 powder particle 100 mesh ~ 120 mesh, the liquid-solid ratio 4:1, and room temperature 30℃. It was found that the final removal rates of Fe, Al, Ca, P impurities could reach 99.99%, 14.02%, 73.27%, 60.00% respectively and the mass fraction of total amount of impurities could be reduced to 1.465×10-4.

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林康英,洪金庆,汤培平,刘宏宇,王文宾,游淳毅,刘碧华,刘瑞聪.太阳能硅制备过程湿法提纯SiO2的工艺优化[J].精细化工,2011,28(12):

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  • 收稿日期:2011-08-02
  • 最后修改日期:2011-10-14
  • 录用日期:2011-10-27
  • 在线发布日期: 2013-03-18
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