Element doping is known to not only modify the electronic structure but also improve the electrochemical activity of electrode materials. Aluminum-doped NiCo2S4 composite electrode material (CC@Al-NiCo2S4) was successfully grown on carbon cloth(CC) via a two-step hydrothermal method with conductive carbon cloth as substrate, nickel chloride and cobalt chloride as raw material, aluminum nitrate as a aluminum source. Scanning electron microscopy shows that the hollow nanotube structure of CC@Al-NiCo2S4 can provide a large number of reaction sites; X-ray photoelectron spectroscopy shows that aluminum mainly exists in CC@NiCo2S4 in the form of Al3+, which can improve the conductivity of CC@NiCo2S4. Based on the results by the electrochemical performance, the specific capacitance of the original CC@NiCo2S4 electrode is 844.5 F/g at the current density of 1 A/g, and the specific capacitance of Al-doped CC@NiCo2S4 is 1515.8 F/g. After 10000 cycles at a current density of 6 A/g, the capacitance retention rate of CC@Al-NiCo2S4 is as high as 87.8%, indicating that aluminum doping can significantly improve the specific capacitance and cycle stability of CC@NiCo2S4.