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第 10 期 孙才英，等: 聚酰亚胺/聚苯胺-TiO 2 复合薄膜制备及表征 ·1635·

原因，使 PI 分子间距离更大，导致相对介电常数更大。 181-185.
介电损耗通常用介质损耗正切 tanδ 来描述 [24] 。 [5] Bei Runxin (贝润鑫), Chen Wenxin (陈文欣), Zhang Yi (张艺).
Research progress of low dielectric constant polyimide films [J].
从介 电损 耗图 可以 看出 ，纯 PI 薄 膜 和掺杂 Insulating Materials (绝缘材料), 2016, 49(8): 1-11.
PANI-TiO 2 复合薄膜的介电损耗角正切（tanδ）随频 [6] Rothman L B. Properties of thin polyimide films[J]. Journal of the
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率的增大有增大的趋势。而掺杂 TiO 2 的 PI 薄膜的
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介电损耗在低频下较高，随着频率增加明显下降， thermal stability of polyimide-graphene oxide composite films[J].
而后又有增加的趋势。实验过程中介电损耗受频率 Thin Solid Films, 2015, 584: 232-237.
[8] Chen Yinshan (陈银珊), Hou Qiong (侯琼), Luo Suilian (罗穗莲).
的影响主要分为两个部分：在较低频率下，空间电 Research development of polyimide/silica hybrid films [J]. New
荷极化占据主导位置，由于纳米颗粒的引入导致空 Chemical Materials (化工新型材料), 2014,42(1): 19-20.
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间电荷极化的产生，损耗角正切值也因此而增加；
文元). Dielectric and mechanical properties of nano Al 2O 3/polyimide
掺杂 TiO 2 的 PI 薄膜，在低频下空间电荷极化程度 composite films[J]. Acta Materiae Compositae Sinica (复合材料学
更大，随着频率增加，电荷极化转向取向极化，介 报), 2016, 33(11): 2419-2425.
[10] Wu Guangning (吴广宁), Liu Yang (刘洋), Luo Yang (罗杨).
电损耗逐渐下降。在较高频率下，取向极化占据主 Influences of nano-alumina on the dielectric property of polyimide
导位置，复合薄膜的损耗角正切值逐渐增大的主要 under the condition of square impulses [J]. High Voltage Engineering
原因为：（1）含有的 TiO 2 或 PANI-TiO 2 掺杂物在电 (高电压技术), 2015, 41(6): 1929-1935.
[11] Feng Y, Yin J, Chen M, et al. Influence of interface on the electrical
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3 结论 Materials Letters, 2015, 148: 22-25.
[13] Zhang Chao (张潮), Liu Chunyu (刘春雨), Deng Panshan (邓盼姗).
（1）SEM 显示：掺杂的 TiO 2 或 PANI-TiO 2 在 Preparation and desulfurization characterization of metal organic
PI 基质中分布均匀。 frameworks/polyimide composite membrane [J]. New Chemical
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（2）TG-DTG 分析发现：掺杂 TiO 2 或 PANI-TiO 2 [14] Wen Xiaomei (文晓梅), You Hexiang (尤鹤翔), Yu Juan (俞娟).
Preparation and characterization of polyimide/polyaniline conductive
对 PI 薄膜热稳定性的影响很大，TiO 2 或 PANI-TiO 2
composites[J]. China Plastics(中国塑料), 2013, 27(6): 42-46.
的掺入提高了薄膜的热分解温度。TiO 2 和 PANI-TiO 2
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对 PI 薄膜热稳定性的影响差异不大。 Preparation and charactrization of PU/PANI nonofiber film via
electrospinning [J]. New Chemical Materials (化工新型材料), 2017,
（3）介电常数测定显示：掺杂 TiO 2 或 PANI-TiO 2
45(2): 61-63.
粒子使薄膜的相对介电常数和介电耗损都得到提高。 [16] Huan Yinghong (郇迎红), Sun Caiying (孙才英), Liu Limin (刘立
（4）拉伸实验显示：掺杂 TiO 2 或 PANI-TiO 2 都 敏). Ultrasonic template preparation of titanium dioxide crystal [J].
China Ceramics(中国陶瓷), 2017, 53(1): 37-40.
提高了 PI 的拉伸强度，随着掺杂量增加，薄膜拉伸
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PI 复合薄膜的研制可以拓展其在电子电工领域
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[20] Jin Ying (金盈), Zeng Guangbin (曾广赋), Zhu Danyang (朱丹阳).
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