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g712g                             ㇫㏳ࡃጒ   FINE CHEMICALS                                 す 40 ࢤ

            㕄ₐܴ㻿喑ӊ䲍ϸ䉕⮱⩢ၽᲮࡃᝃ⩹䲏Ხࡃ㶝ۼᲒ                             ࣺᄱᢌ㕄ౕ 14.7 GHz ̸ͧ–57.8 dB喑㔹ࣇᏓϲͧ 1.9
            ॥ᩣ⩢ⷮ∏ȡWANG ぶ         [54] 㐀व䲆⩢㏧͊ឭᱜݣิγ              mm ȡₑใ喑 Ⴐ Й ⮱ᰶ᩵ ॥ᩣ ፓც㺳 Ⰳ㠰 డ ͧ
            ̭⻺ᴁᕔ⪼Ⅱ SiC ㏠ㆠ㏑㐡喑ఫ 5a ͧ䄒ฺव㏑㐡⮱                       12.5~18.0 GHz喑䕇䓴ఫ 5b जВⰸܧ喑PCS-10.0 ౕ
            TEM ఫ喑जВ⌲ẇౝⰸܧ喑SiC ㏠ㆠ㏑㐡⮱Ꭰ౴Ⱑ                         11.5~14.5 GHz Z in /Z 0 ᰡᣒ䓾 1喑ϻ㔹ڤᰶᰡສ⮱䭨ោ
            ᒱͧ 200 nm喑ౕ㏑㐡㶕䲏⊯㺳ᰶ 2~5 nm ⮱ⷠᅯȡ                     ࡦ䙺喠ఫ 5c ͚ᵦᢛ㐆Ⴧ䶾⢴̸䃎ツᓄݝ⮱㶝ۼ፥᪝
            䄒ฺव㏑㐡ౕ 2~18 GHz ڲڤᰶхᐯϸ⩢ᕔ㘪হ⩢                        ̻䶾⢴⮱ӊ䊃ᕔ㶕ᬻ喑PCS-10.0 ฺव㏑㐡ڤᰶᰡ倅
            ⷮ∏॥ᩣᕔ㘪ȡڣ͚喑⩞ 10%喍䉕䛼ܳ᪝喎㖇ⷠ⵲                           ⮱㶝ۼ፥᪝喑̻ጟ្䖀⮱ SiC ㏠ㆠ⩢ⷮ॥ᩣᱽ᫆Ⱕ
            ☤喍PCS喎ݣิ⮱ SiC ㏠ㆠ㏑㐡喍PCS-10.0喎⮱ᰭᄼ                    ℁喑ڣ㐩व⩢ⷮᕔ㘪ᰭສȡ
















            ఫ 5   w(PCS)=10%ᬣ⮱ SiC ㏠ㆠ㏑㐡⮱ TEM ఫ喍a喎喠ࣇᏓͧ 1.9 mm ᬣ喑̺ह PCS 䉕䛼ܳ᪝⮱ SiC ㏠ㆠ㏑㐡⮱ Z in /Z 0
                 թ喍b喎হ 2~18 GHz ڲ⮱㶝ۼ፥᪝喍c喎         [54]
            Fig. 5    TEM images of SiC nanofibers at w(PCS)=10% (a); Z in /Z 0  value of SiC nanofibers obtained from different PCS mass
                  fractionsratios at thickness of 1.9 mm (b) and attenuation constant in 2~18 GHz (c) [54]

                 䮑 SiC NFs ใ喑ⵁ⾣ϧঅᄦ䲆⩢㏧͊ⷠࡃ➖হ                     ౴࠭ܳ᪐ᄦ⩢ⷮ∏ᒏ᜽ф็⮱᪐ᄱ◦喑⩢ⷮ∏㷘็
            ⅛ࡃ➖㏠ㆠ㏑㐡Ό䔈㵹γⵁ⾣ȡWANG ぶ                  [57] 䕇䓴䲆     ⁎᪐ᄱ㔹⊵㕄㘪䛼喑๔๔᣽ࡴγᱽ᫆⮱॥∏ᕔ㘪ȡ
            ⩢㏧͊হ☚ั⤳ݣิγ䒨䉕ᴁᕔ SiCN NFsȡ䄒ฺव                        2.4   ็ᅯฺव㏠ㆠ㏑㐡
            ᱽ̻᫆ SiC NFs ݣิ̺ह͸ัͧ喟ᄳ SiC NFs ౕ⅛                       ̷ౕ䔝ⵁ⾣͚喑᝭ݣิ⮱॥ᩣݯᱽ᫆็ᆋλࢂ
            ⅁⅁ⅈ͚և倅⍖ั⤳ᑂڒ⅛ٰ㉍喑̻э㐌⮱ SiC 䮣                          ᅯ㐀Ჱ喑఍㔹喑ग㘪ౕⰥᒀ⾱⮱䶾⢴㠰డڲ჋⣝ᰭ
            ⨤㏑㐡Ⱕ℁喑ڣౕ㑍㐂ȠᑜᰟȠរ䒙হៅऍ⮱ᗲۢ                             Ҡ⮱䭨ោࡦ䙺喑ᒵ䯫ౕ䒰㪱⮱⊯ᅯࣇᏓ̸ౕ䒰ც⮱
            ̸᭫⹧ܧᰡສ⮱ᴁ䴔ᕔ喑Вࣷхᐯ⮱⩢ⷮ∏॥ᩣᕔ                             䶾ፓ̷჋⣝倅᩵⮱⩢ⷮ∏॥ᩣȡ̭ψⵁ⾣䃮ᬻ喑ڤ
            㘪ȡڣᰭᄼࣺᄱᢌ㕄जѻ㜠í53.1 dB喑ᰶ᩵॥ᩣፓ                         ᰶᷜᏓ䭨ោ⮱ࣹᅯᝃ็ᅯ㐀Ჱ᭜ᩦ઱䭨ោࡦ䙺ᕔ㘪
            ცͧ 5.6 GHz喑㔹⊯ᅯࣇᏓϲ 1.95 mmȡSiCN NFs                 হ෋ᑧᓛ∏॥ᩣᕔ㘪⮱ᰶ᩵᝸⃢               [60] ȡ̻Ⱋݺ្䖀⮱
            хᐯ⮱ MA ᕔ㘪᭜⩞λᱽ᫆ڲ䘕 CȠSiC হ Si 3 N 4 ⮱                ࢂᅯ॥ᩣݯⰥ℁喑хࡃ⮱ࣹᅯᝃ็ᅯ॥∏ᱽ᫆जВ
            ࡼह҉⩕喑ڣ͚⮱ⷠ㏠ㆠ㐀Ჱчᄩ㜡֣ᲮःाᲮࡃ                             ᭫㦄ᩦ઱䭨ោࡦ䙺হ MA ᕔ㘪ȡ็ᅯ॥ᩣݯ᭜⩞ࡦ
            Ꭳ෋ߍϸ⩢ᢌ㕄喑㔹 SiC হ Si 3 N 4 чϔ⩌Ხࡃ͚ᓰ喑                  䙺ᅯহ॥ᩣᅯ㏱᜽喑䕇䓴㏱वڤᰶ̺ह⩢ⷮ➦ᕔ⮱
            ϔ⩌⩹䲏ᲮࡃВ⊵㕄⩢ⷮ∏ȡ                                      ॥ᩣݯহ㐀ᲱᲒ䃫䃎喑Ҭᰡ็⮱⩢ⷮ∏䔈ڒ็ᅯᱽ
                 ₑใ喑ⷠࡃ䧩఍ڣ㞜ສ⮱㔽㙽㮭হោ⅔ࡃᕔΌ                          ᫆ڲ䘕ȡₑใ喑ᓛ∏जВౕ็ᅯ͸䬡⮱⩹䲏̷็⁎
            ऄݝⵁ⾣ϧঅ⮱Ꭼ∈ڠ∕ȡ̻ SiC Ⱕ℁喑ⷠࡃ䧩                           ᪐ᄱহࣺᄱ喑ϻ㔹ᰶݖλᓛ∏⮱㶝ۼȡ̻ⰥᏁ⮱ࢂ
            喍MoC喎ౕ̻ⷠᱽ᫆㕓व᫦䲏ڤᰶ̭Ⴧ⮱х߬喑఍                            ᅯ㐀ᲱⰥ℁喑хࡃऻ⮱ࣹᅯ㐀Ჱڤᰶᰡ倅⮱॥ᩣᑧ
            ڣౕⷠധҀ͚⮱ᅧᄥᄼλ 10 nm喑जВᰡສ㐀वౕ                          Ꮣহᰡც⮱॥ᩣ䶾⃢ȡHOU ぶ            [61] ౕݣิ็⻺䧮⅔Ҁ
            ㏠ㆠ㏑㐡͚喑ϻ㔹ౕϑअ⩢ⷮ౧͚чᑂ䊤ᰡ็⮱⩹                             ̻ⷠ㏠ㆠ㏑㐡ฺवᱽ᫆⮱ധ⵭̷喑ᣏ⾣γࢂᅯহࣹ
            䲏Ხࡃ    [58] ȡWANG ぶ [59] 䕇䓴☚㼐Ҭ Mo ःАι⩟ധ            ᅯ॥ᩣݯ⮱ᕔ㘪ጛᐯȡⵁ⾣㶕ᬻ喑ࣹᅯ॥ᩣݯڤᰶ
            ৗਾ䨹⯽喍ZIF-8喎͚⮱ Zn 䃫䃎γ Mo 2 C/C ฺवᱽ                  䒰倅ϸ⩢ᢌ㕄⮱ CNFs ᅯহڤᰶ㞜ສ䭨ោࡦ䙺⮱䧮
            ᫆喑Mo 2 C ⮱ᅧᄥᄼλ 5 nm喑ⰥᏁ⮱ᰭᄼࣺᄱᢌ㕄                      ⅔Ҁᅯᒏ᜽γ⽠Ⴧ⮱㕓व喑ౕⰥहࣇᏓ̸喑ࣹᅯ॥
            ͧí60.4 dB喑ᰶ᩵॥ᩣፓცͧ 4.8 GHzȡฺवᱽ͚᫆                    ᩣݯ⮱ᕔ㘪ᬻ᭫хλࢂᅯȡ
            Mo 2 C ㏠ㆠ䷄ㆿ⮱ႅౕᩦअγᱽ᫆⮱ϸ⩢ᢌ㕄ᱧݣ喑                            䧮⅔Ҁ᭜ᠴ䧮᫼হڣЃ̭⻺ᝃ็⻺䔯ᒀ⮱䛾ᆋ
            ڣ͚⩢ᄩ⢴ᢌ㕄হःाᲮࡃ䔯Ꮣ䭺ѻ喑ᑂڒγᰡ็                             ٰ㉍⮱ฺवࡃव➖喑ౕ॥∏䶳ഌ፥㷘⩕҉ⷮᕔϸ䉕喑
            ⮱⩹䲏Ხࡃ喑ϻ㔹䉸εγ Mo 2 C/C ฺवᱽ᫆ᰡສ⮱                       ڣ͚ښ㻿䧮⅔Ҁ喍࠲᠙ MȠUȠWȠXȠY হ Z ಸ喎
            䭨ោࡦ䙺喠ओใ喑Mo 2 C ㏠ㆠ䷄ㆿౕ㏠ㆠ㏬㏑㐡͚⮱                        ҉̭ͧ㏱䧮ⷮᱽ᫆喑⩞λڣᑧⷮᮣऱाᐯᕔȠхᐯ
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